We present the electronic magnetotransport properties of (100)-and (111)-or
iented CeSb thin films. The samples were grown epitaxially by molecular bea
m epitaxy onto sapphire (11 (2) over bar 0) and (0001) substrates. The temp
erature-dependent resistivity is in full correspondence with the behaviour
known from bulk material. For (100)-oriented films the analysis of the temp
erature and magnetic field-dependent magnetoresistivity results in a H/T ph
ase diagram analogous to that of bulk samples. For(111s)-oriented films sli
ght deviations were observed. In Hall-effect measurements of (100)-oriented
samples a sign change of the Hall coefficient occurred which is in contras
t to measurements performed on single crystals. These deviations are interp
reted in terms of a skew-scattering component resulting from an incoherent
background of non-saturated magnetic moments. (C) 2000 Elsevier Science B.V
. All rights reserved.