Growth and structure of Ce/Cu on STO (100) and Fe (100)

Ce/TM (transition metal) (TM = Cu, Fe) bilayer has been grown on STO (1 0 0 ) and GaAs (1 1 0) substrates by MBE method. The structure of TM buffer lay ers is dominated by substrates. As-deposited Ce is amorphous at RT on any T M buffer, but it changes to Ce-TM compounds by annealing. In the case of Ce /Cu on STO (1 0 0), a single phase could be obtained by annealing. Ce/Fe sy stem shows interesting growth characteristics depending on the substrate te mperature and the structure of Fe buffer. These results may provide us with a chance to control the formation of Ce-Cu or Ce-Fe compounds by using the annealing and the crystal structure of buffer layers. (C) 2000 Elsevier Sc ience B.V. All rights reserved.