Crystal growth of CeCu2Si2 from the primary crystallisation field

Citation
S. Nuettgens et al., Crystal growth of CeCu2Si2 from the primary crystallisation field, PHYSICA B, 281, 2000, pp. 979-980
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
281
Year of publication
2000
Pages
979 - 980
Database
ISI
SICI code
0921-4526(200006)281:<979:CGOCFT>2.0.ZU;2-0
Abstract
We investigate the ternary phase diagram of the Ce-Cu-Si system. From DSC m easurements we analyse the liquidus surface which leads together with metal lographic studies to the determination of the primary crystallisation field of CeCu2Si2. Growth experiments using the Nacken Kyropoulos technique in c ombination with a levitating melt start with different compositions within and outside the primary solidification field. The comparison of these growt h experiments with our results of the phase diagram leads to an understandi ng of the growth morphology and the growth process of CeCu2Si2. Large singl e grain CeCu2Si2 crystals with dimensions up to 7 mm can be grown from a me lt of the primary solidification field. First measurements using these sing le crystals will be reported. (C) 2000 Elsevier Science B.V. All rights res erved.