Intragap states in SmB6

Authors
Sluchanko, NE Glushkov, VV Gorshunov, BP Demishev, SV Kondrin, MV Pronin, AA Volkov, AA Savchenko, AK Gruner, G Bruynseraede, Y Moshchalkov, VV Kunii, S
Citation
Ne. Sluchanko et al., Intragap states in SmB6, PHYS REV B, 61(15), 2000, pp. 9906-9909
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
15
Year of publication
2000
Pages
9906 - 9909
Database
ISI
SICI code
1098-0121(20000415)61:15<9906:ISIS>2.0.ZU;2-6
Abstract
The results of wide-range measurements of the low-frequency, rf, and microw ave conductivity in the typical mixed-valent narrow-gap semiconductor samar ium hexaboride are presented. The established steplike anomaly of conductiv ity sigma(v) around 10 GHz is discussed in the framework of the exciton-pol aron approach and coherent-state formation in SmB6 at helium temperatures. A combined analysis of the dc- and wide-range ac-transport characteristics and dielectric permittivity data at low temperatures is developed.