Atomic structure of the Si(112) 7X1-In surface

Authors
Gai, Z Zhao, RG Yang, WS Sakurai, T
Citation
Z. Gai et al., Atomic structure of the Si(112) 7X1-In surface, PHYS REV B, 61(15), 2000, pp. 9928-9931
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
15
Year of publication
2000
Pages
9928 - 9931
Database
ISI
SICI code
1098-0121(20000415)61:15<9928:ASOTS7>2.0.ZU;2-M
Abstract
Thr atomic structure of the Si(112)7 X 1-In surface has been studied with s canning tunneling microscopy (STM) and low-energy electron diffraction (LEE D), and a model is proposed on the basis of the high resolution dual bias S TM images and the systematic weakening of the LEED fractional-order beams, for further investigation. In sharp contrast to what has been reported for the Si(112)6 X 1-Ga surface, indium atoms in the Si(112)7 X 1-In surface do not occupy the step-edge site.