Internal transitions of confined magnetoexcitons in GaAs-(Ga,Al)As quantumwells

Internal transitions of confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells have been theoretically studied under magnetic fields applied along t he growth direction. Results are obtained within the effective-mass approxi mation and by using a variational procedure. Calculations are performed for transitions from 1s-like to 2p-, 3p-, and 4p-like magnetoexciton states as functions of the applied magnetic field, and for several well widths. Theo retical results for the far-infrared intraexcitonic transition energies are then compared with recent experimental measurements using optically detect ed resonance techniques.