Effect of random field fluctuations on excitonic transitions of individualCdSe quantum dots

Citation
V. Turck et al., Effect of random field fluctuations on excitonic transitions of individualCdSe quantum dots, PHYS REV B, 61(15), 2000, pp. 9944-9947
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
15
Year of publication
2000
Pages
9944 - 9947
Database
ISI
SICI code
1098-0121(20000415)61:15<9944:EORFFO>2.0.ZU;2-T
Abstract
The quantum confined Stark effect is observed for quantum dots (QD's) expos ed to randomly fluctuating electric fields in epitaxial structures. These f ields, attributed to charges localized at defects in the vicinity of the QD 's, lead to a jitter in the emission energies of individual QD's. This jitt er has typical frequencies of below about 1 Hz and is characteristic for ea ch QD thus providing a unique means to unambiguously identify the emission spectra of single QD's. Up to eight lines are identified for individual QD' s and attributed to excitonic, biexcitonic, and LO-phonon-assisted transiti ons. The intensity of the LO-phonon replica is surprisingly large correspon ding to Huang-Rhys factors of about one.