Single crystals of Cu1-xGaxCr2Se4 have been prepared using a chemical
vapor method. The absolute thermoelectric power S and the electrical r
esistivity rho of single crystals with compositions x = 0.036, 0.158,
0.374, 0.394, have been measured in the temperature range from 5 to 40
0K. All compounds are p-type metallic conductors with the residual res
istance increasing with increasing gallium concentration. The temperat
ure dependence of the resistivity is almost constant for temperatures
T<T-c and increases close to the Curie temperature T-c, indicating a s
pin scattering contribution. A broad hump Delta S(T) which goes to zer
o close to T-c apparently is superimposed on a linear diffusion thermo
power, suggesting magnon drag.