Disinfection of seeds and sprout inhibition of potatoes with low energy electrons

Citation
S. Todoriki et T. Hayashi, Disinfection of seeds and sprout inhibition of potatoes with low energy electrons, RADIAT PH C, 57(3-6), 2000, pp. 253-255
Citations number
6
Categorie Soggetti
Physics
Journal title
RADIATION PHYSICS AND CHEMISTRY
ISSN journal
0969806X → ACNP
Volume
57
Issue
3-6
Year of publication
2000
Pages
253 - 255
Database
ISI
SICI code
0969-806X(200003)57:3-6<253:DOSASI>2.0.ZU;2-G
Abstract
Electrons at acceleration voltages of 170-190 kV reduced microbial count of seeds of adzuki bean, pot herb mustered and black gram to undetectable lev els without any detrimental effects on the germination ability. However, el ectrons at 200 kV or higher affected the growing of black gram sprouts. The energies of electrons at the surface of seed (15 cm distance from the acce lerator's window) at acceleration voltages of 170-190 kV were estimated to be 60-90 kV, based on the stopping powers of titanium and air. Electrons at acceleration voltages of 250 kV or higher inhibited sprouting of potato tu bers of various cultivars. The results suggest the efficacy of low energy e lectron treatment for disinfection of seeds and sprout inhibition of potato es. (C) 2000 Elsevier Science Ltd. All rights reserved.