Citation
Dr. Yang et al., Oxygen-related centers in multicrystalline silicon, SOL EN MAT, 62(1-2), 2000, pp. 37-42
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248
→ ACNP
Volume
62
Issue
1-2
Year of publication
2000
Pages
37 - 42
Database
ISI
SICI code
0927-0248(20000415)62:1-2<37:OCIMS>2.0.ZU;2-6
Abstract
Oxygen and oxygen-related centers in cast multicrystalline silicon (mc-Si)
have been investigated. The concentration profile and the map of oxygen in
me-Si revealed that oxygen with higher concentration occurred at the bottom
area and at the edge area of me-Si ingots. The oxygen concentration and it
s profile were partly dependent on the cooling progress. It was found that
the thermal donors related to oxygen were generated in the area of higher o
xygen concentration. The concentration of thermal donors can reach to 1 x 1
0(14)/cm(3). Meanwhile, as-grown oxygen precipitates were observed at the b
ottom of mc-Si. (C) 2000 Elsevier Science B.V. All rights reserved.