Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing

Authors
Zhao, YW Wang, WJ Yun, F Xu, Y Liao, XB Ma, ZX Yue, GH Kong, GL
Citation
Yw. Zhao et al., Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing, SOL EN MAT, 62(1-2), 2000, pp. 143-148
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
62
Issue
1-2
Year of publication
2000
Pages
143 - 148
Database
ISI
SICI code
0927-0248(20000415)62:1-2<143:PSFPBI>2.0.ZU;2-X
Abstract
An improved pulsed rapid thermal annealing (PRTA) has been used for the sol id-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550 d egrees C thermal bias/1-s 850 degrees C thermal pulse. The microstructure a nd surface morphology of the crystallized films are investigated by X-ray d iffraction (XRD). The results indicate that this PRTA is a suitable post-cr ystallization technique for fabricating large-area poly-Si films on low-cos t substrate. (C) 2000 Elsevier Science B.V. All rights reserved.