Influence of hydrogen dilution on low-temperature polycrystalline silicon formation using RF excitation SiH4/H-2 plasma

Authors
Yao, RH Lin, XY Wu, P Yu, CY Shi, WZ Lin, KX
Citation
Rh. Yao et al., Influence of hydrogen dilution on low-temperature polycrystalline silicon formation using RF excitation SiH4/H-2 plasma, SOL EN MAT, 62(1-2), 2000, pp. 187-192
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
62
Issue
1-2
Year of publication
2000
Pages
187 - 192
Database
ISI
SICI code
0927-0248(20000415)62:1-2<187:IOHDOL>2.0.ZU;2-B
Abstract
The effect of hydrogen dilution was investigated on polycrystalline silicon formation using radio frequency excitation SiH4/ H-2 plasma. The hydrogen dilution reduces the growth rate of the a-Si:H films. The dark conductivity of the a-Si:H films increases with increasing H-2 dilution. The dark condu ctivity of the poly-Si films formed by recrystallization annealing of the a -Si: H film decrease with H-2 dilution. The grain size, with X-ray diffract ion spectroscopy and scanning electron microscopy images of the poly-Si fil ms, is in reverse ratio to the H-2 dilution. (C) 2000 Elsevier Science B.V. All rights reserved.