Citation
S. Jia et al., Preparation of thin film polycrystalline silicon on glass by photo-thermalannealing, SOL EN MAT, 62(1-2), 2000, pp. 201-205
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248
→ ACNP
Volume
62
Issue
1-2
Year of publication
2000
Pages
201 - 205
Database
ISI
SICI code
0927-0248(20000415)62:1-2<201:POTFPS>2.0.ZU;2-U
Abstract
Photo-thermal annealing (PTA) was utilized for solid-phase crystallization
of amorphous silicon films below 600 degrees C. Amorphous silicon was depos
ited by plasma enhanced chemical vapor deposition (PECVD) and annealed by t
ungsten halogen lamps heating. The PTA process can crystallize amorphous si
licon in less duration, with lower thermal budget than traditional furnace
annealing. The role of photons in facilitating crystallization was given sp
ecial attention. Application of the material to electronic devices such as
solar cells and thin film transistors (TFT) is the aim of our research. (C)
2000 Elsevier Science B.V. All rights reserved.