AlAs monolayer dependence of the radiative recombination rate in a type IIGaAs-AlAs double quantum well

Authors
Martins, D Gourdon, C Lavallard, P Planel, R
Citation
D. Martins et al., AlAs monolayer dependence of the radiative recombination rate in a type IIGaAs-AlAs double quantum well, SOL ST COMM, 114(7), 2000, pp. 389-394
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
114
Issue
7
Year of publication
2000
Pages
389 - 394
Database
ISI
SICI code
0038-1098(2000)114:7<389:AMDOTR>2.0.ZU;2-L
Abstract
In a GaAs/AlAs/GaAs type II double quantum well with thickness gradient we study the ratio of photoluminescence intensities of the zero-phonon line an d the phonon replica as a function of AlAs thickness. From the time-resolve d photoluminescence we determine the radiative times due to the T-X couplin g and to the phonon-assisted transition. Both time integrated and time-reso lved results show clear evidence of the monolayer dependence of the Gamma-X coupling matrix element on AlAs thickness. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.