IN-SITU GROWTH OF POLYCRYSTALLINE BISMUTH-IRON-GARNET FILMS ON QUARTZGLASS SUBSTRATE

Authors
OKUDA T KUDOH A YOSHIHARA S ADACHI N OHSATO H
Citation
T. Okuda et al., IN-SITU GROWTH OF POLYCRYSTALLINE BISMUTH-IRON-GARNET FILMS ON QUARTZGLASS SUBSTRATE, Journal de physique. IV, 7(C1), 1997, pp. 707-708
Citations number
7
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
7
Issue
C1
Year of publication
1997
Pages
707 - 708
Database
ISI
SICI code
1155-4339(1997)7:C1<707:IGOPBF>2.0.ZU;2-P
Abstract
Polycrystalline (Bi,Gd),(Fe, Ga)(5)O-12 garnet layer was prepared on a quartz glass substrate at 500 degrees C by alternating reactive ion b eam sputtering using two ceramic targets, Gd3Ga5O12, and 3Bi(2)O(3)-5F e(2)O(3). The lattice constant was 12.548 Angstrom. The layer was almo st magnetically compensated and paramagnetic. On that layer, polycryst alline Bi3Fe5O12 garnet layer was epitaxially grown by reactive ion be am sputtering. Those two layers were successively deposited in the sam e apparatus.