Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films

The role of composition on the resistivity and thermal stability of sputter ed Ta-Si-N films have been studied using X-ray diffraction, Rutherford back scattering spectrometry, and sheet resistance measurement. Films with highe r silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28 Si0.07N0.65 starts to crystallize at about 900 degrees C, Ta0.24Si0.10N0.66 and Ta0.24Si0.12N0.64 were thermal for heat treatment below 1100 degrees C . In-situ sheet resistance measurement also showed that the sheet resistanc e for the alloys varies with composition and decreases with temperature. Ou r results indicate that Ta-Si-N films would find other applications in semi conductor devices, beside being used as a diffusion barrier. (C) 2000 Elsev ier Science S.A. All rights reserved.