BiVO4 thin film preparation by metalorganic decomposition

Citation
A. Galembeck et Ol. Alves, BiVO4 thin film preparation by metalorganic decomposition, THIN SOL FI, 365(1), 2000, pp. 90-93
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
365
Issue
1
Year of publication
2000
Pages
90 - 93
Database
ISI
SICI code
0040-6090(20000403)365:1<90:BTFPBM>2.0.ZU;2-Y
Abstract
This paper describes the first obtention of BiVO4 thin films. These films w ere prepared with the Metalorganic Decomposition technique, starting from b ismuth 2-ethyl-hexanoate and vanadium (IV) (oxy)acetylacetonate precursors. These compounds were dissolved in freshly distilled acetylacetone, dip-coa ted on common borosilicate glass substrates and pyrolysed at 400 degrees C. Film thickness ranged from 50 to 100 nm, depending on the number of deposi tion steps. Films are transparent, allowing the first obtention of UV-vis a bsorption spectra acquisition in transmission mode. Raman microprobe spectr a confirmed the obtention of BiVO4 deposited as an homogeneous film. Scanni ng electron micrographs showed a continuous and porous surface. (C) 2000 El sevier Science S.A. All rights reserved.