Jm. Pikal et al., Temperature dependence of intrinsic recombination coefficients in 1.3 mu mInAsP/InP quantum-well semiconductor lasers, APPL PHYS L, 76(19), 2000, pp. 2659-2661
In this letter, we report on the temperature dependence of the intrinsic re
combination coefficients in long-wavelength quantum-well lasers. Unlike pre
vious studies, we obtain the intrinsic recombination coefficients from carr
ier lifetime measurements with a correction for the carrier population in t
he barrier and separate confinement heterostructure region. Our results sho
w that this carrier population not only affects the value of the recombinat
ion coefficients obtained but also their temperature dependence. We measure
a significant increase in the intrinsic Auger coefficient with temperature
indicating that the frequently reported temperature insensitivity of this
coefficient is likely due to carriers spilling out of the wells at elevated
temperatures and not an intrinsic property of the Auger process. (C) 2000
American Institute of Physics. [S0003-6951(00)03519-1].