High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annea ling temperature required for strain transfer has been reduced through boro n implantation to the buried oxide, leading to a high quality SiGe alloy fr ee from dislocations as evident from the near-band gap photoluminescence. N early complete strain relaxation (similar to 95%) for SiGe alloy of a thick ness beyond the conventional critical thickness has been obtained. (C) 2000 American Institute of Physics. [S0003-6951(00)00619-7].