Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

We have studied the early stages of annealing in boron implanted silicon. I n a grazing incidence diffuse scattering investigation of implantation-indu ced defects, we have observed narrow diffuse rods of intensity along < 111 > directions. These diffuse streaks arise from stacking faults formed durin g annealing in the 1000 degrees C range. From the width of the diffuse stre ak the average size of the stacking fault is 71 nm in diameter. These inten sity rods are distinct from the point defect or point defect cluster scatte ring in the tails of the Bragg peak (Huang scattering). From the q dependen ce of the scattered intensity in the Huang scattering region we find clear evidence for defect clusters with an average effective size of 4 nm, remark ably independent of the annealing temperature. These observations are discu ssed in the context of the enhanced diffusion of implanted boron over its b ulk value referred to as transient enhanced diffusion. (C) 2000 American In stitute of Physics. [S0003-6951(00)01519-9].