Electric-pulse-induced reversible resistance change effect in magnetoresistive films

A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal m agnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-d ependent resistance changes of more than 1700% were observed under applied pulses of similar to 100 ns duration and as low as +/- 5 V magnitude. The r esistance changes were cumulative with pulse number, were reversible and no nvolatile. This electrically induced effect, observed in CMR materials at r oom temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronic s arena including high-density nonvolatile memory. (C) 2000 American Instit ute of Physics. [S0003-6951(00)00419-8].