Citation
P. Ghosez et Km. Rabe, Microscopic model of ferroelectricity in stress-free PbTiO3 ultrathin films, APPL PHYS L, 76(19), 2000, pp. 2767-2769
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
76
Issue
19
Year of publication
2000
Pages
2767 - 2769
Database
ISI
SICI code
0003-6951(20000508)76:19<2767:MMOFIS>2.0.ZU;2-P
Abstract
The ground-state polarization of PbTiO3 thin films is studied using a micro
scopic effective Hamiltonian with parameters obtained from first-principles
calculations. Under short-circuit electrical boundary conditions, (001) fi
lms with thickness as low as three unit cells are found to have a perpendic
ularly polarized ferroelectric ground state with significant enhancement of
the polarization at the surface. (C) 2000 American Institute of Physics. [
S0003- 6951(00)02119-7].