Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design

Authors
Wallace, SG Robinson, BJ Mascher, P Haugen, HK Thompson, DA Dalacu, D Martinu, L
Citation
Sg. Wallace et al., Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design, APPL PHYS L, 76(19), 2000, pp. 2791-2793
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
19
Year of publication
2000
Pages
2791 - 2793
Database
ISI
SICI code
0003-6951(20000508)76:19<2791:RIOILT>2.0.ZU;2-E
Abstract
The refractive indices of In1-xGaxAsyP1-y grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spe ctroscopic ellipsometry. Indices in the transparent regime of these quatern aries, at 980 and 808 nm (relevant to the design of pump sources for erbium -doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. (C) 2000 American Institute of Physics. [S0003- 6951(00)05119-6 ].