GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing

Authors
McDougall, SD Jubber, MJ Kowalski, OP Marsh, JH Aitchison, JS
Citation
Sd. Mcdougall et al., GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing, ELECTR LETT, 36(8), 2000, pp. 749-750
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
8
Year of publication
2000
Pages
749 - 750
Database
ISI
SICI code
0013-5194(20000413)36:8<749:GWPPWN>2.0.ZU;2-R
Abstract
Waveguide photodiodes with non-absorbing input windows have been fabricated using a sputtered silica quantum well intermixing technique. Thermal model ling of the GaAs/AlGaAs photodiodes indicates that facet temperatures can b e significantly reduced with window lengths of greater than 10 mu m. Device testing shows that optical damage occurs at double the power of convention al photodiodes with absorbing facets.