A technique for enhancing the performance or thin film electroluminescent d
evices is presented. Thin film phosphors have been processed with 20 ns pul
ses or 880 mJ/cm(2) laser irradiation from a 249 nm KrF excimer laser. Elec
troluminescent characterisation demonstrates a four-Fold improvement in emi
tted luminous intensity, as compared to thermally annealed structures.