High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

We have fabricated 1 kV 4H and 6H SIC Schottky diodes utilizing a metal-oxi de overlap structure for electric held termination. This simple structure w hen used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design consi derations, the fabrication procedure, and characterization results for thes e I kV Ni-SiC Schottky diodes, Comparison to similarly fabricated Pt-SiC Sc hottky diodes is reported. The Ni-SiC ohmic contact formation has been stud ied using Auger electron spectroscopy and X-rag diffraction, The characteri zation study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperatur e performance of these diodes has also been investigated, The diodes show g ood rectifying behavior with ON/OFF current ratios, ranging from 10(6) to 1 0(7) at 27 degrees C and in excess of 10(6) up to 300 degrees C.