6H-SiC P+N junctions fabricated by beryllium implantation

The use of beryllium (Be) as an alternate p-type dopant for implanted silic on carbide (SIC) p(+)n junctions is experimentally demonstrated. The implan ted layers have been characterized with photoluminescence (PL) as well as s econdary ion mass spectrometry (SIMS) measurements, In comparison with boro n implanted p(+)-n junctions, Be-implanted junctions show improvement in th e forward characteristics while exhibiting slightly higher reverse leakages . The activation energies extracted from the forward conduction and reverse leakage characteristics of the Be-diodes are 1.5 eV, and 0.13 eV, respecti vely. Moreover, activation energy extraction in the forward ohmic region re veals the Be impurity level at 0.38+/-0.04 eV, The minority carrier lifetim e extracted from reverse recovery measurements is as high as 160 ns for the Be-diodes compared to 82 ns obtained for the B-diodes.