An 1800 V triple implanted vertical 6H-SiC MOSFET

6H silicon carbide vertical power MOSFET's with a blocking voltage of 1800 V have been fabricated, Applying a novel processing scheme, n(+) source reg ions, p-base regions and p-wells have been fabricated by three different io n implantation steps. Our SiC triple ion implanted MOSFET's have a lateral channel and a planar polysilicon gate electrode. The 1800 V blocking voltag e of the devices is due to the avalanche breakdown of the reverse diode. Th e reverse current density is well below 200 mu A/cm(2) for drain source vol tages up to 90% of the breakdown voltage, The MOSFET's are normally off sho wing a threshold voltage of 2.7 V. The active area of 0.48 mm(2) delivers a forward drain current of 0.3 A at V-GS = 10 V and V-DS 8 V, The specific o n resistance was determined to 82 m Omega cm(2) at 50 mV drain soul-ce volt age and at VGS = 10 V which corresponds to an uppermost acceptable oxide fi eld strength of about 2.7 h MV/cm. This specific on resistance is an order of magnitude lower than silicon DMOSFET's of the same blocking capability c ould offer.