Current status of silicon carbide based high-temperature gas sensors

Silicon carbide (SIC) based field effect gas sensors can be operated at ver y high temperatures. Catalytic metal-insulator-silicon carbide (MISiC) Scho ttky diodes respond very fast to a change between a reducing and an oxidizi ng atmosphere, and cylinder-specific combustion engine monitoring has been demonstrated. The sensors have also been suggested for high-temperature ele ctronic nose applications. Car applications and other harsh environments pu t very strong requirements on the long-term stability of the sensors. Here rye review the current status of the field of SiC based Schottkg diode gas sensors with emphasis on the work in our group. Basic work on understanding of the detection mechanism and the influence of interfacial layers on the long-term stability of the sensors is reviewed, The direction of future res earch and device development in our group is also discussed.