Citation
Iv. Grekhov et al., SiC-based phototransistor with a tunnel MOS emitter, IEEE DEVICE, 46(3), 1999, pp. 577-579
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383
→ ACNP
Volume
46
Issue
3
Year of publication
1999
Pages
577 - 579
Database
ISI
SICI code
0018-9383(199903)46:3<577:SPWATM>2.0.ZU;2-3
Abstract
Au/tunnel-thin SiO2/n-6H-SiC structures hare first been fabricated and show
n to operate as tunnel MOS emitter phototransistors under reverse bias and
UV-irradiation conditions (current gain reached 3-7), This paper contains d
etails of sample preparation, measured device characteristics, and their in
terpretation.