A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements

Authors
Siriex, D Noblanc, O Barataud, D Chartier, E Brylinski, C Quere, R
Citation
D. Siriex et al., A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements, IEEE DEVICE, 46(3), 1999, pp. 580-584
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
3
Year of publication
1999
Pages
580 - 584
Database
ISI
SICI code
0018-9383(199903)46:3<580:ACNMOS>2.0.ZU;2-O
Abstract
In order to use SIC devices in CAD nonlinear circuit, a nonlinear model of 4H-SiC MESFET has been obtained using a technique based on pulsed I(V) char acteristics and pulsed S-parameter measurements. The nonlinear I-V drain-so urce current was represented using a table-based model which aas implemente d in a harmonic balance simulator, Its accuracy is shown by a comparison wi th active load-pull measurements.