An inter-subband device with terahertz applications

Citation
Pd. Buckle et al., An inter-subband device with terahertz applications, IEEE MICR T, 48(4), 2000, pp. 632-638
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
48
Issue
4
Year of publication
2000
Part
2
Pages
632 - 638
Database
ISI
SICI code
0018-9480(200004)48:4<632:AIDWTA>2.0.ZU;2-V
Abstract
A theoretical analysis of a modulator based on two coupled resonators is pr esented in this paper. This modulator exhibits a resonant enhancement in it s response. It is used as a component of tunneling structures designed for operation at terahertz frequencies; unlike conventional resonant tunneling structures, these use triple barriers. Data from optical and electrical mea surements on a series of devices based on one design of a triple-barrier tu nneling structure have been analyzed to estimate their behavior at frequenc ies over 1 THz. The analysis gives values for the resonantly enhanced admit tance, its bandwidth, the bias-frequency relationship, and the requirements for a matching circuit to a 50-Omega environment. The results show that on e existing structure might be used in oscillators working at 1 THz.