Continuous wave operation of InGaN laser diodes fabricated on SiC substrates

We introduce the characteristics for continuous wave operation at room temp erature of InGaN laser diodes fabricated on SiC substrates. The threshold c urrent way 60mA, the threshold voltage was 8.3 VI and the oscillation wavel ength was 404.4 nm. The lifetime of the laser diodes with a constant light output of 1 mW at 25 degrees C was 57 hours. The heat dissipation of the de vices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p-side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.