Excitonic optical properties of GaN homoepitaxial layers have been studied
by means of magnetoluminescence and time-resolved luminescence spectroscopy
. The luminescence lines due to the radiative recombination of excitons bou
nd to neutral donors and accepters have been measured under magnetic field
up to 8T, which was aligned perpendicular and parallel to the hexagonal c-a
xis. Under the magnetic field aligned perpendicular to the hexagonal c-axis
, both the donor- and acceptor-bound-exciton lines clearly split into two c
omponents. which originated from the Zeeman splitting. The effective g-fact
ors for both the donor- and acceptor-bound excitons were estimated to be 2.
02 and 2.47. respectively. Under the magnetic field aligned parallel to the
hexagonal c-axis, slight broadening of the bound-exciton lines was observe
d and the Zeeman splitting was too small to be detected. On the other hand,
the diamagnetic shift for both the donor- and acceptor-bound-exciton lumin
escence lines was observed under the magnetic field aligned both perpendicu
lar and parallel to the hexagonal c-axis. It was found that the diamagnetic
shift of the donor-bound exciton was smaller than that of the acceptor-bou
nd exciton. Furthermore, recombination dynamics of excitonic transitions wa
s measured under high-density excitation. An excitation-density-dependent t
ransition of the dominant radiative recombination process from donor-bound
excitons to biexcitons was clearly observed in the temporal behavior. In ad
dition, double-exponential decay of biexciton luminescence was observed, wh
ich is one of the characteristics of biexciton luminescence at high excitat
ion densities.