Preparation and properties of Bi2S3 films

Citation
Vn. Semenov et Ov. Ostapenko, Preparation and properties of Bi2S3 films, INORG MATER, 36(3), 2000, pp. 211-213
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
3
Year of publication
2000
Pages
211 - 213
Database
ISI
SICI code
0020-1685(200003)36:3<211:PAPOBF>2.0.ZU;2-4
Abstract
Bi2S3 semiconducting films were prepared by spray pyrolysis of solutions co ntaining bismuth(III) salts and thiourea. The deposition of the films was f ound to occur via the formation of thiourea complexes, followed by their th ermal decomposition. Some physical properties of the films were studied.