Characteristics of intermixed InGaAs/InGaAsP multi-quantum-well structure

The intermixing of a InGaAs/InGaAsP multi-quantum-well (MQW) structure indu ced by SiO2 dielectric cap layer deposition and heat treatment was investig ated. Photoluminescence experiments reveal a large blue shift of the effect ive bandgap for the intermixed quantum well. By secondary ion mass spectros copy, the group III and V elements of a MQW are found to interdiffuse at a similar rate after the intermixing process. An optical waveguide was fabric ated using intermixed material where a propagation loss reduction of 450 dB was recorded at a wavelength close to the original bandgap wavelength.