The selective area deposition of diamond films

By selectively seeding, polycrystalline diamond films have been patterned o n mirror-polished Si substrate using hot-filament chemical vapor deposition . Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H-2 concentration and at the growth rate of 2.6 mu m/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.