Mechanism of nitrogen incorporation into amorphous-CNx films formed by plasma-enhanced chemical-vapor deposition of the doublet and quartet states ofthe CN radical

High-resolution CN(B-2 Sigma(+)-X(2)Sigma(+))emission spectra were observed for the various processes to form amorphous-CNx (a-CNx) films using the pl asma-enhanced chemical-vapor deposition of the CN radical produced from the dissociative excitation reactions of cyanides. A strong correlation was co nfirmed between the electronic states of CN in the plasma and the bonding s tates of nitrogen atoms in the films. The (4)Sigma(+) and (4)Pi states of C N were the precursors of the one- and/or two-dimensional C=N and C-N networ k structures of the films with high nitrogen content, [N]/([N]+[C]) less th an or equal to 0.5. The CN(X(2)Sigma(+)) state formed the C=N terminations primarily, a part of which changed to the one-dimensional C=N network from the additive reactions. The above correlation was fully explained by the mo lecular orbitals and the electronic configurations for the relevant electro nic states of CN.