Thermal conductivity measurement of molten silicon by a hot-disk method inshort-duration microgravity environments

Citation
H. Nagai et al., Thermal conductivity measurement of molten silicon by a hot-disk method inshort-duration microgravity environments, JPN J A P 1, 39(3A), 2000, pp. 1405-1408
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
3A
Year of publication
2000
Pages
1405 - 1408
Database
ISI
SICI code
Abstract
The thermal conductivity of molten silicon was measured by a hot-disk metho d in short-duration microgravity environments. The hot-disk sensor was made of molybdenum foil cut in a conducting pattern and covered with an aluminu m nitride plate. Aluminum nitride has good resistivity against corrosion fr om silicon melt and the molybdenum foil was protected from the molten silic on. The thermal conductivity of molten silicon measured on the ground was e stimated to be 45.6 W.m(-1).K-1 at the melting point (1687 K). The thermal conductivity of molten silicon measured in microgravity was about 5% lower than that measured on the ground.