H. Nagai et al., Thermal conductivity measurement of molten silicon by a hot-disk method inshort-duration microgravity environments, JPN J A P 1, 39(3A), 2000, pp. 1405-1408
The thermal conductivity of molten silicon was measured by a hot-disk metho
d in short-duration microgravity environments. The hot-disk sensor was made
of molybdenum foil cut in a conducting pattern and covered with an aluminu
m nitride plate. Aluminum nitride has good resistivity against corrosion fr
om silicon melt and the molybdenum foil was protected from the molten silic
on. The thermal conductivity of molten silicon measured on the ground was e
stimated to be 45.6 W.m(-1).K-1 at the melting point (1687 K). The thermal
conductivity of molten silicon measured in microgravity was about 5% lower
than that measured on the ground.