Magnetoresistance and Hall magnetometry of single submicron ferromagnetic structures

We present measurements on hybrid ferromagnetic/semiconductor devices. Sing le, submicron ferromagnetic structures have been fabricated directly onto t he surface of a semiconductor, which incorporates a near-surface two-dimens ional electron gas (2DEG). The induced Hall resistance and magnetoresistanc e of the 2DEG are used to measure the magnetic properties of the stripes di rectly. The relative merits of these two techniques are compared using a de vice geometry in which both types of measurement can be made simultaneously . (C) 2000 American Institute of Physics. [S0021-8979(00)17208-1].