Magnetoresistance in electron doped Cr1-xMnxO2 double exchange ferromagnet

Citation
B. Martinez et al., Magnetoresistance in electron doped Cr1-xMnxO2 double exchange ferromagnet, J APPL PHYS, 87(9), 2000, pp. 6019-6021
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6019 - 6021
Database
ISI
SICI code
0021-8979(20000501)87:9<6019:MIEDCD>2.0.ZU;2-5
Abstract
Electron doping in the half-metallic ferromagnet CrO2 oxide has been reache d via partial Cr substitution by Mn. Synthesis of ceramic samples is accomp lished under high temperature and high oxygen pressure. It is found that el ectron doping reduces the magnetization and the Curie temperature of the sa mples. Simultaneously, the low temperature and low field magnetoresistance of the samples increase. The results are discussed on the light of the curr ent models for the electronic structure of this oxide and the possible role of segregated insulating impurity phases. (C) 2000 American Institute of P hysics. [S0021-8979(00)79308-X].