Scanning tunneling microscopy investigation of single electron tunneling in Co-Al-O and Cu-Al-O granular films

Authors
Takanashi, K Mitani, S Chiba, J Fujimori, H
Citation
K. Takanashi et al., Scanning tunneling microscopy investigation of single electron tunneling in Co-Al-O and Cu-Al-O granular films, J APPL PHYS, 87(9), 2000, pp. 6331-6333
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6331 - 6333
Database
ISI
SICI code
0021-8979(20000501)87:9<6331:STMIOS>2.0.ZU;2-X
Abstract
We have investigated single electron tunneling in Co-Al-O and Cu-Al-O granu lar films using scanning tunneling microscopy (STM). Topographic images sho w well-defined granular structures where nanometer-sized metal granules are embedded in insulating matrix. The Coulomb staircases in the current-volta ge (I-V) curves are clearly observed even at room temperature in both films . For the Co-Al-O film, furthermore, negative differential conductance appe ars in the Coulomb staircase. (C) 2000 American Institute of Physics. [S002 1-8979(00)74808-0].