Magnetotransport properties of (Ga, Mn)Sb

Authors
Matsukura, F Abe, E Ohno, H
Citation
F. Matsukura et al., Magnetotransport properties of (Ga, Mn)Sb, J APPL PHYS, 87(9), 2000, pp. 6442-6444
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6442 - 6444
Database
ISI
SICI code
0021-8979(20000501)87:9<6442:MPO(M>2.0.ZU;2-C
Abstract
The preparation of dilute alloy of GaSb and Mn, (Ga, Mn)Sb, with a few perc ent of Mn by molecular beam epitaxy and its magnetotransport properties are reported. Magnetotransport measurements show a pronounced anomalous Hall e ffect and negative magnetoresistance below 50 K. The results suggest that M n atoms are incorporated in the GaSb host, resulting in the formation of th e ferromagnetic semiconductor, (Ga, Mn)Sb. (C) 2000 American Institute of P hysics. [S0021-8979(00)91908-X].