Fe-based magnetic-semiconductor hybrid structures for photocarrier-inducedmagnetism

Citation
S. Haneda et al., Fe-based magnetic-semiconductor hybrid structures for photocarrier-inducedmagnetism, J APPL PHYS, 87(9), 2000, pp. 6445-6447
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6445 - 6447
Database
ISI
SICI code
0021-8979(20000501)87:9<6445:FMHSFP>2.0.ZU;2-F
Abstract
Preparation of GaAs-Fe composite structures has been studied by molecular-b eam epitaxy. Enhanced magnetization has been observed under the red-light i rradiation at 160 K. Through the study of both magnetization and magnetotra nsport characteristics, we believe that enhanced magnetization is strongly related to the interaction between photogenerated carriers and magnetic inc lusions. (C) 2000 American Institute of Physics. [S0021-8979(00)19408-3].