Magnetoluminescence in quantum dots and quantum wires of II-VI diluted magnetic semiconductors

Citation
N. Takahashi et al., Magnetoluminescence in quantum dots and quantum wires of II-VI diluted magnetic semiconductors, J APPL PHYS, 87(9), 2000, pp. 6469-6471
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6469 - 6471
Database
ISI
SICI code
0021-8979(20000501)87:9<6469:MIQDAQ>2.0.ZU;2-B
Abstract
We report optical properties of quantum dots and quantum wires of diluted m agnetic semiconductors. The quantum dots of Cd1-xMnxSe (x=0.03) show the ex citon luminescence at around 2.4 eV, which indicates a strong confinement e ffect of the exciton energy corresponding to the dot size of 4-6 nm. The Ze eman shift of the exciton luminescence was observed with an effective g val ue of 91, showing a significant exchange interaction of the excitons with t he Mn ions in the dots. The exciton luminescence from the quantum wires of Cd1-xMnxSe (x=0.08) shifts by 5.2 meV to the higher energy side with decrea sing the wire width from 126 to 26 nm. The high energy shift in the narrow wires indicates the influence of the one-dimensional quantum confinement ef fect for the exciton states. The effective g value of the exciton in these quantum wires is 100-150. The exciton luminescence from the wires is linear ly polarized (up to 80%) parallel to the wire direction at zero field, whic h indicates one-dimensional properties of the quantum wire excitons. (C) 20 00 American Institute of Physics. [S0021-8979(00)82508-6].