Size effect and temperature dependence of spin conduction in Gd/SiN ultrathin film

The possibility of enhancing the resistivity while preserving magnetism is investigated by growing metal/insulator trilayers and superlattices, where the metal is Gd and the insulator is amorphous Si3N4 for the first time. A large size effect on Curie temperature (T-C) is found in the susceptibility in contrast with Gd epitaxially grown on metals. T-C decreases to 180 K, i .e., 70% of the bulk T-C in 10 nm thick Gd film, which is attributed to an electrical isolation and surface states. On the other hand, the susceptibil ity chi at T-C is almost unchanged as in epitaxial Gd on metal. The resisti vity R doubled as the Gd layer thickness decreases from 100 to 10 nm, and t he T-C estimated from R agrees with that from chi. Additionally, a possible interlayer coupling or an effect of surface layers adjacent to Si3N4 was d etected in superlattices. (C) 2000 American Institute of Physics. [S0021-89 79(00)86808-5].