Kmh. Lenssen et al., Sensor properties of a robust giant magnetoresistance material system at elevated temperatures, J APPL PHYS, 87(9), 2000, pp. 6665-6667
The temperature dependence of the giant magnetoresistance (GMR) ratio, resi
stance and exchange-biasing field for a spin valve comprising an Ir19Mn81-b
iased artificial antiferromagnet (AAF) has been studied up to 325 degrees C
. Up to 200-250 degrees C the temperature effects are reversible, at higher
temperatures gradual irreversible changes are observed, probably due to at
omic diffusion. The magnetoresistance effect is even at 200 degrees C still
higher than for anisotropic magnetoresistance sensors at room temperature.
The resistance of the multilayer shows a maximum around 250 degrees C. We
found that this is due to the peculiar behavior of Ir-Mn, which has a negat
ive temperature coefficient of the resistance. This provides a possibility
to tune the temperature coefficient for the complete multilayer by varying
the thickness of the Ir-Mn layer. The relative decrease of the exchange-bia
sing field as a function of temperature is much smaller for spin valves wit
h AAF than for conventional spin valves (without AAF). Furthermore, it was
demonstrated that the GMR ratio can be increased to 12% at room temperature
by using a dual spin valve with two AAFs. (C) 2000 American Institute of P
hysics. [S0021-8979(00)49008-0].