Grain size reduction by utilizing a very thin CrW seedlayer and dry-etching process in CoCrTaNiPt longitudinal media

Citation
S. Yoshimura et al., Grain size reduction by utilizing a very thin CrW seedlayer and dry-etching process in CoCrTaNiPt longitudinal media, J APPL PHYS, 87(9), 2000, pp. 6860-6862
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6860 - 6862
Database
ISI
SICI code
0021-8979(20000501)87:9<6860:GSRBUA>2.0.ZU;2-P
Abstract
To decrease grain size and grain size distribution in CoCr15Ta3.5Ni10Pt5/Cr longitudinal thin film media, a very thin CrW54 seedlayer combined with a dry-etching process were utilized. In the media dry etched after CrW54 depo sition, utilization of 1.5 nm CrW54 reduces the grain diameter and sigma to 9.4 and 2.2 nm, respectively. By optimizing CrW54 seedlayer thickness and dry-etching process, grain diameter and sigma of the magnetic layer can be reduced while maintaining coercivity, longitudinal orientation of magnetic grains, and magnetic interactions. (C) 2000 American Institute of Physics. [S0021-8979(00)48008-4].