Hexagonal strontium ferrite (SrM) thin films with various Cr composition in
the range of 0-36 at. % were sputtered on the thermally oxidized silicon w
afers at the substrate temperature of 550 degrees C using targets of compos
ition of SrFe8Ox. It was found that the SrM grows with its c axis oriented
perpendicularly to the film plane and its c-axis orientation was improved b
y Cr addition in the range of 9-36 at. %. The saturation magnetization and
coercivity in the perpendicular direction were about 150 emu/cm(3) and 2.8
kOe, respectively for 9 at. % of Cr addition. The grain size observed at th
e surface was 80 nm and the surface roughness was 11 nm. (C) 2000 American
Institute of Physics. [S0021-8979(00)94308-1].