Contributions to switching field in NiO-Co-Cu-based spin valves

Authors
Chopra, HD Yang, DX Chen, PJ Egelhoff, WF
Citation
Hd. Chopra et al., Contributions to switching field in NiO-Co-Cu-based spin valves, J APPL PHYS, 87(9), 2000, pp. 6986-6988
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
9
Year of publication
2000
Part
3
Pages
6986 - 6988
Database
ISI
SICI code
0021-8979(20000501)87:9<6986:CTSFIN>2.0.ZU;2-A
Abstract
The present study shows that the often observed and undesirable coercivity enhancement in the free Co layer of spin valves result from magnetostatic c oupling between domain walls in the free Co layer and high coercivity NiO-p inned Co layer. The observed escape fields, in excess of intrinsic coercivi ty of Co single film, required to overcome magnetostatic coupling between d omain walls are in agreement with theoretically predicted values. (C) 2000 American Institute of Physics. [S0021-8979(00)63108-0].